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Interface Engineering for 2D Phosphorene Based Optoelectronic Devices

发布时间:2017-06-08    作者:    来源:    浏览次数:    打印


Interface Engineering for 2D Phosphorene Based Optoelectronic Devices

报告题目:Interface Engineering for 2D Phosphorene Based Optoelectronic Devices

报 告 人:Prof. Wei CHEN (National University of Singapore)

报告时间:2017年06月09日(星期五)上午 9:00-11:00

报告地点:南校区物理与电子学院双超所211会议室

报告摘要:

Black phosphorus (BP), as a fast-emerging two-dimensional (2D) material, stands out from other members in 2D family such as graphene and transition metal dichalcogenides (TMDs), and attracts substantial research interests attributed to its remarkably unique fundamental properties and versatile device applications. In this talk, I will summarize and discuss our recent work for interface engineered 2D materials phosphorene based field-effect-transistors (FETs) and photo-transistors, through the combination of in-situ FET device evaluation and photoelectron spectroscopy investigation. We will particularly emphasize on the electron and hole doping effect on the transport properties and optoelectronic response of phosphorene devices.

References

(1) “Surface Transfer Doping Induced Effective Modulation on Ambipolar Characteristics of Few-layer Black Phosphorus” Xiang D, Han C, Wu J, Zhong S, Liu YY, Lin JD, Zhang XA, Hu WP, Özyilmaz B, Castro Neto AH, Wee ATS,Chen Wei*,Nature Communication6, 6485 (2015)

(2) “Epitaxial Growth of Single Layer Blue Phosphorene: A New Phase of Two-Dimensional Phosphorus" JL, Zhao ST, Han C, Wang ZZ, Zhong S, Sun S, Guo R, Zhou X, Gu CD, Yuan KD, Li ZY*,Chen Wei*,Nano Letter16, 4903-4908 (2016)

(3) Growth of quasi-free-standing single layer blue phosphorus on Tellurium monolayer functionalized Au(111)”Gu CD, Zhao ST, Zhang JL, Sun S, Yuan KD, Hu ZH, Han C, Ma ZR, Wang L, Huo FW, Huang W, Li ZY*,Chen Wei*,ACS NANO11, 4943–4949 (2017)

(4) “Oxygen Induced Strong Mobility Modulation in Few-layer Black Phosphorus” Han C, Hu ZH, Carvalho A, Guo N, Zhang JL, Hu F, Xiang D, Wu J, Lei B, Wang L, Zhang C, Castro-Neto AH,Chen Wei*,2D Materials4021007 (2017)

报告人简介:

Dr. CHEN Weiis currently anAssociate Professor (2013 - )in both Chemistry Department and Physics Department at National University of Singapore (NUS). He received his Bachelor’s degree in Chemistry from Nanjing University (China) in 2001, Ph.D. degree from Chemistry Department at NUS in 2004 under the supervision of Prof Loh Kian Ping and Prof Andrew T. S. Wee. His current research interests includeMolecular-scale Interface Engineering for Molecular, Organic and 2D Materials-based Electronics, and Interface-Controlled Nanocatalysis for Energy and Environmental Research.




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